L'ablation laser pulsée pour la synthèse de films supraconducteurs à haute temperature critique = Pulsed laser ablation for HTS thin films synthesisBOUZEHOUANE, K; CONTOUR, J. P.Le Vide (1995). 1998, Vol 54, Num 287, pp 303-330, issn 1266-0167Article

X-ray photoelectron spectroscopy study of the effects of ultrapure water on GaAsMASSIES, J; CONTOUR, J. P.Applied physics letters. 1985, Vol 46, Num 12, pp 1150-1152, issn 0003-6951Article

Pulsed laser deposition of Bi₄Cu_2xV_2(1-x)O₁₁ thin filmsSANT, C; CONTOUR, J. P.Journal of crystal growth. 1995, Vol 153, Num 1-2, pp 63-67, issn 0022-0248Article

In situ deoxidation of GaAs substrates by HCl GasMASSIES, J; CONTOUR, J.-P.Japanese journal of applied physics. 1987, Vol 26, Num 1, pp L38-L40, issn 0021-4922Article

Substrate chemical etching prior to molecular-beam epitaxy: an x-ray photoelectron spectroscopy study of GaAs {001} surfaces etched by the H₂SO₄-H₂O₂-H₂O solutionMASSIES, J; CONTOUR, J. P.Journal of applied physics. 1985, Vol 58, Num 2, pp 806-810, issn 0021-8979Article

An x-ray photoelectron spectroscopy and low-energy electron diffraction controlled surface preparation of Si(100) prior to epitaxial growth of GaAsCONTOUR, J. P; MASSIES, J; D'AVITAYA, F. A et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1987, Vol 5, Num 4, pp 908-910, issn 0734-211XArticle

Residual carbon and oxygen surface contamination of chemically etched GaAs (001) substratesSALETES, A; MASSIES, J; CONTOUR, J. P et al.Japanese journal of applied physics. 1986, Vol 25, Num 1, pp L48-L51, issn 0021-4922, 2Article

Microspot elementary and chemical analyses using combined high energy resolution Auger electron spectroscopy and x-ray photoelectron spectroscopySTAIB, P; CONTOUR, J. P; MASSIES, J et al.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1985, Vol 3, Num 5, pp 1965-1968, issn 0734-2101Article

Epitaxie d'hétéro-structures d'oxydes supraconducteurs = Heterostructures epitaxy of superconducting oxidesCONTOUR, J. P.Le Vide (1995). 1998, Vol 53, Num 289, issn 1266-0167, 547, 568-584 [18 p.]Conference Paper

Hétérostructures cuprate supraconducteur/oxyde isolant en épitaxie par ablation laser pulsée = Pulsed laser deposition of high Tc superconductor/insulator heterostructuresBOUZEHOUANE, K; CONTOUR, J. P; RAVELOSONA, D et al.Le Vide (1995). 1997, Vol 53, Num 283, issn 1266-0167, 7, 15-34 [21 p.]Article

A chemical etching process to obtain clean InP {001} surfacesMASSIES, J; TURCO, F; CONTOUR, J.-P et al.Japanese journal of applied physics. 1986, Vol 25, Num 8, pp L664-L667, issn 0021-4922, 2Article

A chemical etching process to obtain clean InP {001} surfacesMASSIES, J; TURCO, F; CONTOUR, J.-P et al.Japanese journal of applied physics. 1986, Vol 25, Num 8, pp L664-L667, issn 0021-4922, 2Article

Etude de superréseaux (PrBa₂Cu_3-xGa_xO₇)_M/(YBa₂Cu₃O₇)_N élaborés par ablation laser pulsée. Application à l'étude de l'effet de champ = Study of (PrBa₂Cu_3-xGa_xO₇)_M/(YBa₂Cu₃O₇)_N superlattices grown by pulsed laser deposition. Application to the study of field effectRavelosona Ramasiter, Dafine; Contour, J.-P.1996, 228 p.Thesis

Surface segregation and growth interface roughening in Al_xGa_1-xAsMASSIES, J; TURCO, F; CONTOUR, J. P et al.Semiconductor science and technology. 1987, Vol 2, Num 3, pp 179-181, issn 0268-1242Article

X-ray photoelectron spectroscopy study of GaAs(001) and InP(001) cleaning procedures prior to molecular beam epitaxyCONTOUR, J. P; MASSES, J; SALETES, A et al.Japanese journal of applied physics. 1985, Vol 24, Num 7, pp L563-L565, issn 0021-4922Article

(GaAl)As tunnel junctions grown by molecular beam epitaxy: intercell ohmic contacts for multiple-band-gap solar cellsCONTOUR, J. P; M'BAYE, A; CHAIX, C et al.Solar cells. 1984, Vol 13, Num 1, pp 67-76, issn 0379-6787Article

Interfaces in {100} epitaxial heterostructures of perovskite oxidesMAURICE, J.-L; IMHOFF, D; CONTOUR, J.-P et al.Philosophical magazine (2003. Print). 2006, Vol 86, Num 15, pp 2127-2146, issn 1478-6435, 20 p.Conference Paper

Transport measurements in YBa₂Cu₃O_7-δ/PrBa₂Cu_3-xGa_xO_7-δ superlattices : experimental evidence for underdopingLERIDON, B; DEFOSSEZ, A; DUMONT, J et al.Physica. C. Superconductivity and its applications. 1999, Vol 328, Num 1-2, pp 104-110Article

Dimer arsenic source using a high efficiency catalytic cracking oven for molecular beam epitaxyGARCIA, J. C; BARSKI, A; CONTOUR, J. P et al.Applied physics letters. 1987, Vol 51, Num 8, pp 593-595, issn 0003-6951Article

Modulation spectroscopy of the complex photoluminescence band of Ga_0.7Al_0.3As:SiGIL, B; LEROUX, M; CONTOUR, J. P et al.Physical review. B, Condensed matter. 1991, Vol 43, Num 15, pp 12335-12340, issn 0163-1829, 6 p.Article

An XPS study of the passivating oxide layer produced on GaAs (001) substrate by heating in air above 200°CCONTOUR, J. P; MASSIES, J; FRONIUS, H et al.Japanese journal of applied physics. 1988, Vol 27, Num 2, pp L167-L169, issn 0021-4922, 2Article

Experimental evidence of difference in surface and bulk compositions of Al_xGa_1-xAs, Al_xIn_1-xAs and Ga_xIn_1-xAs epitaxial layers grown by molecular beam epitaxyMASSIES, J; TURCO, F; SALETES, A et al.Journal of crystal growth. 1987, Vol 80, Num 2, pp 307-314, issn 0022-0248Conference Paper

X-ray photoelectron spectroscopy study of GaAs(001) surface thermocleaning prior to molecular beam epitaxyCONTOUR, J. P; MASSIES, J; SALETES, A et al.Applied physics. A, Solids and surfaces. 1985, Vol 38, Num 1, pp 45-47, issn 0721-7250Article

Evidence for strontium segregation in La_0.7Sr_0.3MnO₃ thin films grown by pulsed laser deposition: consequences for tunnelling junctionsBERTACCO, R; CONTOUR, J. P; BARTHELEMY, A et al.Surface science. 2002, Vol 511, Num 1-3, pp 366-372, issn 0039-6028Article

Effect of arsenic pressure on donor and acceptor concentration in Si doped MBE GaAs layersCHAIX, C; RADISSON, A; CONTOUR, J.-P et al.Japanese journal of applied physics. 1990, Vol 29, Num 10, pp 1908-1909, issn 0021-4922, 2 p., 1Article